• MMBF4393LT1G
  • MMBF4393LT1G
  • MMBF4393LT1G
  • MMBF4393LT1G
  • MMBF4393LT1G
  • MMBF4393LT1G
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-3V; Package/Case:SOT-23 ;RoHS Compliant: Yes

polarityN-Channel
voltage_rating_dc30.0 V
breakdown_voltage_gate_to_source30.0 V
id_continuous_drain_current50.0 mA
power_dissipation225 mW
vds_drain_to_source_voltage30.0 V
current_rating50.0 mA
lead_free_statusLead Free
halogen_free_statusHalogen Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23
lifecycle_statusActive
reach_svhc_complianceNo SVHC
rohs_statusCompliant
pin_count3
breakdown_voltage-30.0 V
Breakdown Voltage Vbr30V
Zero Gate Voltage Drain Current Idss Min5mA
Zero Gate Voltage Drain Current Idss Max30mA
Gate-Source Cutoff Voltage Vgs(off) Max-3V
Transistor Case StyleSOT-23
Transistor TypeJFET
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Capacitance Ciss Max14pF
Current Idss Max150mA
Current Idss Min50mA
Drain Source Voltage Vds30V
On State Resistance Max100ohm
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Power Dissipation Pd225mW
SMD Marking6G
Termination TypeSurface Mount Device
Transistor PolarityN Channel
Voltage Vgs Off Min-0.5V
Zero Gate Voltage Drain Current Idss5mA to 30mA
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