• MMBFJ177LT1G
  • MMBFJ177LT1G
  • MMBFJ177LT1G
  • MMBFJ177LT1G
  • MMBFJ177LT1G
  • MMBFJ177LT1G
  • MMBFJ177LT1G
Срок поставки и цена – по запросу

JFET; Transistor Polarity:P Channel; Breakdown Voltage, V(br)gss:30V; Zero Gate Voltage Drain Current Min, Idss:1.5mA; Zero Gate Voltage Drain Current Max, Idss:20mA; Gate-Source Cutoff Voltage Max, Vgs(off):2.5V ;RoHS Compliant: Yes

polarityP-Channel
input_capacitance11.0 pF
voltage_rating_dc-25.0 V
breakdown_voltage_gate_to_source30.0 V
id_continuous_drain_current20.0 mA
power_dissipation225 mW
vds_drain_to_source_voltage25.0 V
current_rating-20.0 mA
lead_free_statusLead Free
halogen_free_statusHalogen Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23
lifecycle_statusActive
reach_svhc_complianceNo SVHC
rohs_statusCompliant
pin_count3
breakdown_voltage30.0 V
Количество в упаковке1
КорпусSOT-23-3
Вес0.03 г
Breakdown Voltage Vbr30V
Zero Gate Voltage Drain Current Idss Min-1.5mA
Zero Gate Voltage Drain Current Idss Max-20mA
Gate-Source Cutoff Voltage Vgs(off) Max2.5V
Transistor Case StyleSOT-23
Transistor TypeJFET
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Capacitance Ciss Max11pF
Current Idss Max20mA
Current Idss Min1.5mA
Drain Source Voltage Vds-30V
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Power Dissipation Pd225mW
Power Dissipation Ptot Max225mW
SMD Marking6Y
Termination TypeSurface Mount Device
Transistor PolarityP Channel
Voltage Vgs Off Min0.8V
Zero Gate Voltage Drain Current Idss-1.5mA to -20mA
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