MMBFJ177LT1G Купить в Москве

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JFET; Transistor Polarity:P Channel; Breakdown Voltage, V(br)gss:30V; Zero Gate Voltage Drain Current Min, Idss:1.5mA; Zero Gate Voltage Drain Current Max, Idss:20mA; Gate-Source Cutoff Voltage Max, Vgs(off):2.5V ;RoHS Compliant: Yes

polarity	P-Channel
input_capacitance	11.0 pF
voltage_rating_dc	-25.0 V
breakdown_voltage_gate_to_source	30.0 V
id_continuous_drain_current	20.0 mA
power_dissipation	225 mW
vds_drain_to_source_voltage	25.0 V
current_rating	-20.0 mA
lead_free_status	Lead Free
halogen_free_status	Halogen Free
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SOT-23
lifecycle_status	Active
reach_svhc_compliance	No SVHC
rohs_status	Compliant
pin_count	3
breakdown_voltage	30.0 V
Количество в упаковке	1
Корпус	SOT-23-3
Вес	0.03 г
Breakdown Voltage Vbr	30V
Zero Gate Voltage Drain Current Idss Min	-1.5mA
Zero Gate Voltage Drain Current Idss Max	-20mA
Gate-Source Cutoff Voltage Vgs(off) Max	2.5V
Transistor Case Style	SOT-23
Transistor Type	JFET
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	AEC-Q101
MSL	MSL 1 - Unlimited
SVHC	No SVHC (07-Jul-2017)
Capacitance Ciss Max	11pF
Current Idss Max	20mA
Current Idss Min	1.5mA
Drain Source Voltage Vds	-30V
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Power Dissipation Pd	225mW
Power Dissipation Ptot Max	225mW
SMD Marking	6Y
Termination Type	Surface Mount Device
Transistor Polarity	P Channel
Voltage Vgs Off Min	0.8V
Zero Gate Voltage Drain Current Idss	-1.5mA to -20mA