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Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA
polarity | N-Channel |
voltage_rating_dc | 25.0 V |
id_continuous_drain_current | 30.0 mA |
power_dissipation | 350 mW |
vds_drain_to_source_voltage | 25.0 V |
current_rating | 10.0 mA |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
mounting_style | Surface Mount |
packaging | Tape |
case_package | SOT-23 |
lifecycle_status | Active |
rohs_status | Compliant |
pin_count | 3 |
breakdown_voltage | 25.0 V |
Breakdown Voltage Vbr | -25V |
Zero Gate Voltage Drain Current Idss Min | 12mA |
Zero Gate Voltage Drain Current Idss Max | 30mA |
Gate-Source Cutoff Voltage Vgs(off) Max | -4V |
Transistor Case Style | SOT-23 |
Transistor Type | RF FET |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (15-Jun-2015) |
Power Dissipation Pd | 350mW |
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