• MMBFJ309
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Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA

polarityN-Channel
voltage_rating_dc25.0 V
id_continuous_drain_current30.0 mA
power_dissipation350 mW
vds_drain_to_source_voltage25.0 V
current_rating10.0 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape
case_packageSOT-23
lifecycle_statusActive
rohs_statusCompliant
pin_count3
breakdown_voltage25.0 V
Breakdown Voltage Vbr-25V
Zero Gate Voltage Drain Current Idss Min12mA
Zero Gate Voltage Drain Current Idss Max30mA
Gate-Source Cutoff Voltage Vgs(off) Max-4V
Transistor Case StyleSOT-23
Transistor TypeRF FET
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Power Dissipation Pd350mW
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