• MMBT5550LT1G
  • MMBT5550LT1G
  • MMBT5550LT1G
  • MMBT5550LT1G
  • MMBT5550LT1G
  • MMBT5550LT1G
  • MMBT5550LT1G
Срок поставки и цена – по запросу

Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:140V; Collector Emitter Saturation Voltage, Vce(sat):60V; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):60; Package/Case:SOT-323 ;RoHS Compliant: Yes

polarityNPN, N-Channel
reach_svhc_complianceNo SVHC
voltage_rating_dc140 V
power_dissipation225 mW
current_rating600 mA
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageTO-236, SC-59, SOT-23-3
lifecycle_statusActive
rohs_statusCompliant
pin_count3
Количество в упаковке3000
КорпусSOT-23-3
Вес0.031 г
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo140V
Transition Frequency ft-
Power Dissipation Pd225mW
DC Collector Current600mA
DC Current Gain hFE250hFE
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMMBTxxxx Series
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Collector Emitter Saturation Voltage Vce(on)60V
Current Ic Continuous a Max60mA
Hfe Min250
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Transistor TypePower Bipolar
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