MMBT5550LT1G Купить в Москве

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Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:140V; Collector Emitter Saturation Voltage, Vce(sat):60V; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):60; Package/Case:SOT-323 ;RoHS Compliant: Yes

polarity	NPN, N-Channel
reach_svhc_compliance	No SVHC
voltage_rating_dc	140 V
power_dissipation	225 mW
current_rating	600 mA
lead_free_status	Lead Free
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	TO-236, SC-59, SOT-23-3
lifecycle_status	Active
rohs_status	Compliant
pin_count	3
Количество в упаковке	3000
Корпус	SOT-23-3
Вес	0.031 г
Transistor Polarity	NPN
Collector Emitter Voltage V(br)ceo	140V
Transition Frequency ft	-
Power Dissipation Pd	225mW
DC Collector Current	600mA
DC Current Gain hFE	250hFE
Transistor Case Style	SOT-23
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	MMBTxxxx Series
Automotive Qualification Standard	AEC-Q101
MSL	MSL 1 - Unlimited
SVHC	No SVHC (07-Jul-2017)
Collector Emitter Saturation Voltage Vce(on)	60V
Current Ic Continuous a Max	60mA
Hfe Min	250
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Termination Type	Surface Mount Device
Transistor Type	Power Bipolar