• MMBTH10LT1G
  • MMBTH10LT1G
  • MMBTH10LT1G
  • MMBTH10LT1G
  • MMBTH10LT1G
Срок поставки и цена – по запросу

TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Power Dissipation Pd:225mW; DC Collector Current:4mA; DC Current Gain hFE:60; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:650MHz; Hfe Min:60; Package / Case:SOT-23; Power Dissipation Pd:225mW; Power Dissipation Ptot Max:300mW; Termination Type:SMD

polarityNPN, N-Channel
breakdown_voltage_collector_to_emitter25.0 V
voltage_rating_dc25.0 V
power_dissipation225 mW
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
halogen_free_statusHalogen Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageTO-236, SC-59, SOT-23-3
lifecycle_statusActive
rohs_statusCompliant
pin_count3
current_rating4.00 mA
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo25V
Transition Frequency ft650MHz
Power Dissipation Pd225mW
DC Collector Current4mA
DC Current Gain hFE60hFE
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMMBTxxxx Series
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
Collector Emitter Saturation Voltage Vce(on)500mV
Current Ic Continuous a Max4A
Gain Bandwidth ft Typ650MHz
Hfe Min60
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Power Dissipation Ptot Max300mW
Termination TypeSurface Mount Device
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