• MMBZ18VALT1G
  • MMBZ18VALT1G
  • MMBZ18VALT1G
  • MMBZ18VALT1G
  • MMBZ18VALT1G
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These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers printers business machines communication systems medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

voltage_rating_dc18.0 V
size_height1.26 mm
power_rating40.0 W
case_packageSOT-23
size_width1.40 mm
rohs_statusCompliant
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
size_length3.04 mm
lifecycle_statusActive
pin_count3
breakdown_voltage18.0 V
Количество в упаковке3000
КорпусSOT-23-3
Вес0.031 г
Product RangeMMBZ Series
TVS PolarityUnidirectional
Reverse Stand-Off Voltage Vrwm14.5V
Clamping Voltage Vc Max25V
Diode Case StyleSOT-23
No. of Pins3Pins
Breakdown Voltage Min17.1V
Breakdown Voltage Max18.9V
Peak Pulse Power Dissipation40W
PackagingCut Tape
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (07-Jul-2017)
MSLMSL 1 - Unlimited
Peak Pulse Current Ippm1.6A
Power Dissipation Max225mW
Power Dissipation Pd225mW
Power Dissipation Ptot Max225mW
Termination TypeSurface Mount Device
Test Current1mA
Zener Voltage Vz Typ18V
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