• MMBZ33VALT1G
  • MMBZ33VALT1G
  • MMBZ33VALT1G
  • MMBZ33VALT1G
  • MMBZ33VALT1G
  • MMBZ33VALT1G
  • MMBZ33VALT1G
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These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers printers business machines communication systems medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

reach_svhc_complianceNo SVHC
size_height1.26 mm
power_rating40.0 W
case_packageSOT-23
size_width1.40 mm
rohs_statusCompliant
voltage_rating_dc33.0 V
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
size_length3.04 mm
breakdown_voltage33.0 V
lifecycle_statusActive
operating_voltage26.0 V
pin_count3
current_rating1.00 A
Product RangeMMBZ3 Series
TVS PolarityUnidirectional
Reverse Stand-Off Voltage Vrwm26V
Clamping Voltage Vc Max46V
Diode Case StyleSOT-23
No. of Pins3Pins
Breakdown Voltage Min31.35V
Breakdown Voltage Max34.65V
Peak Pulse Power Dissipation40W
PackagingTape & Reel
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (07-Jul-2017)
Diode TypeESD Protection
MSLMSL 1 - Unlimited
Operating Voltage26V
Peak Pulse Current Ippm870mA
Power Dissipation Pd40W
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