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These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.
Количество в упаковке | 50 |
Корпус | SO8 |
Вес | 0.33 г |
No. of Channels | 1Channels |
Optocoupler Case Style | SOIC |
No. of Pins | 8Pins |
Forward Current If Max | 60mA |
Isolation Voltage | 2.5kV |
CTR Min | 100% |
Collector Emitter Voltage V(br)ceo | 70V |
Packaging | Each |
Product Range | - |
SVHC | No SVHC (07-Jul-2017) |
Input Current | 10mA |
Operating Temperature Max | 100°C |
Operating Temperature Min | -40°C |
Operating Temperature Range | -40°C to +100°C |
Optocoupler Output Type | Phototransistor |
Output Voltage | 70V |
Output Voltage Max | 100V |
voltage_rating_dc | 70.0 V |
case_package | SOIC |
rise_time | 1.60 µs |
reach_svhc_compliance | No SVHC |
lead_free_status | Lead Free |
mounting_style | Surface Mount |
isolation_voltage | 2.50 kV |
packaging | Box |
input_voltage_dc | 1.15 V |
number_of_circuits | 1 |
input_current | 10.0 mA |
lifecycle_status | Active |
output_voltage | 100 V, 70.0 V |
rohs_status | Compliant |
pin_count | 8 |
number_of_channels | 1 |
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