• MOCD217R2M
  • MOCD217R2M
  • MOCD217R2M
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The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

Количество в упаковке2500
КорпусSO8-150-1.27
Вес0.28 г
case_packageSOIC
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
rise_time3.20 µs
mounting_styleSurface Mount
isolation_voltage2.50 kV
packagingTape & Reel (TR)
input_voltage_dc1.05 V
number_of_circuits2
input_current10.0 mA
lifecycle_statusActive
output_voltage30.0 V (max)
rohs_statusCompliant
pin_count8
number_of_channels2
No. of Channels2Channels
Optocoupler Case StyleSOIC
No. of Pins8Pins
Forward Current If Max60mA
Isolation Voltage2.5kV
CTR Min100%
Collector Emitter Voltage V(br)ceo30V
PackagingCut Tape
Product Range-
SVHCNo SVHC (15-Jun-2015)
Current Transfer Ratio Min100%
External Depth5.84mm
External Length / Height3.18mm
External Width6.1mm
Fall Time tf5.7µs
Forward Current If(AV)1mA
Input Current10mA
Operating Temperature Max100°C
Operating Temperature Min-40°C
Operating Temperature Range-40°C to +100°C
Optocoupler Output TypePhototransistor
Output Voltage30V
Rise Time7.5µs
Test Voltage3000V
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