MOCD217R2M Купить в Москве

Срок: 9 дней

Склад: 2480 штук

59,72 ₽

от 1 шт.

57,93 ₽

от 16 шт.

56,14 ₽

от 50 шт.

54,94 ₽

от 83 шт.

52,56 ₽

от 167 шт.

The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

Количество в упаковке	2500
Корпус	SO8-150-1.27
Вес	0.28 г
case_package	SOIC
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
rise_time	3.20 µs
mounting_style	Surface Mount
isolation_voltage	2.50 kV
packaging	Tape & Reel (TR)
input_voltage_dc	1.05 V
number_of_circuits	2
input_current	10.0 mA
lifecycle_status	Active
output_voltage	30.0 V (max)
rohs_status	Compliant
pin_count	8
number_of_channels	2
No. of Channels	2Channels
Optocoupler Case Style	SOIC
No. of Pins	8Pins
Forward Current If Max	60mA
Isolation Voltage	2.5kV
CTR Min	100%
Collector Emitter Voltage V(br)ceo	30V
Packaging	Cut Tape
Product Range	-
SVHC	No SVHC (15-Jun-2015)
Current Transfer Ratio Min	100%
External Depth	5.84mm
External Length / Height	3.18mm
External Width	6.1mm
Fall Time tf	5.7µs
Forward Current If(AV)	1mA
Input Current	10mA
Operating Temperature Max	100°C
Operating Temperature Min	-40°C
Operating Temperature Range	-40°C to +100°C
Optocoupler Output Type	Phototransistor
Output Voltage	30V
Rise Time	7.5µs
Test Voltage	3000V