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The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
Количество в упаковке | 2500 |
Корпус | SO8-150-1.27 |
Вес | 0.28 г |
case_package | SOIC |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
rise_time | 3.20 µs |
mounting_style | Surface Mount |
isolation_voltage | 2.50 kV |
packaging | Tape & Reel (TR) |
input_voltage_dc | 1.05 V |
number_of_circuits | 2 |
input_current | 10.0 mA |
lifecycle_status | Active |
output_voltage | 30.0 V (max) |
rohs_status | Compliant |
pin_count | 8 |
number_of_channels | 2 |
No. of Channels | 2Channels |
Optocoupler Case Style | SOIC |
No. of Pins | 8Pins |
Forward Current If Max | 60mA |
Isolation Voltage | 2.5kV |
CTR Min | 100% |
Collector Emitter Voltage V(br)ceo | 30V |
Packaging | Cut Tape |
Product Range | - |
SVHC | No SVHC (15-Jun-2015) |
Current Transfer Ratio Min | 100% |
External Depth | 5.84mm |
External Length / Height | 3.18mm |
External Width | 6.1mm |
Fall Time tf | 5.7µs |
Forward Current If(AV) | 1mA |
Input Current | 10mA |
Operating Temperature Max | 100°C |
Operating Temperature Min | -40°C |
Operating Temperature Range | -40°C to +100°C |
Optocoupler Output Type | Phototransistor |
Output Voltage | 30V |
Rise Time | 7.5µs |
Test Voltage | 3000V |