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These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
polarity | P-Channel |
voltage_rating_dc | -20.0 V |
breakdown_voltage_gate_to_source | -8.00 V to 8.00 V |
id_continuous_drain_current | 24.0 A |
breakdown_voltage_drain_to_source | -20.0 V |
vds_drain_to_source_voltage | -20.0 V |
current_rating | -24.0 A |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
mounting_style | Surface Mount |
packaging | Tape |
case_package | TO-263 |
rds_drain_to_source_resistance_on | 41.0 mΩ |
rohs_status | Compliant |
pin_count | 3 |
power_dissipation | 60.0 W |
Transistor Polarity | P Channel |
Continuous Drain Current Id | -24A |
Drain Source Voltage Vds | -20V |
On Resistance Rds(on) | 0.041ohm |
Rds(on) Test Voltage Vgs | -4.5V |
Threshold Voltage Vgs | -700mV |
Power Dissipation Pd | 60W |
Transistor Case Style | TO-263AB |
No. of Pins | 3Pins |
Operating Temperature Max | 175°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (15-Jun-2015) |
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