• NDB6020P
  • NDB6020P
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These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

polarityP-Channel
voltage_rating_dc-20.0 V
breakdown_voltage_gate_to_source-8.00 V to 8.00 V
id_continuous_drain_current24.0 A
breakdown_voltage_drain_to_source-20.0 V
vds_drain_to_source_voltage-20.0 V
current_rating-24.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape
case_packageTO-263
rds_drain_to_source_resistance_on41.0 mΩ
rohs_statusCompliant
pin_count3
power_dissipation60.0 W
Transistor PolarityP Channel
Continuous Drain Current Id-24A
Drain Source Voltage Vds-20V
On Resistance Rds(on)0.041ohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-700mV
Power Dissipation Pd60W
Transistor Case StyleTO-263AB
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
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