• NDS331N
  • NDS331N
  • NDS331N
  • NDS331N
  • NDS331N
  • NDS331N
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These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Количество в упаковке3000
КорпусSOT23
Вес0.035 г
polarityN-Channel
voltage_rating_dc20.0 V
breakdown_voltage_gate_to_source8.00 V
id_continuous_drain_current1.30 A
breakdown_voltage_drain_to_source20.0 V
vds_drain_to_source_voltage20.0 V
current_rating1.30 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingTape & Reel (TR), Cut Tape (CT)
rds_drain_to_source_resistance_on210 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation500 mW
Transistor PolarityN Channel
Continuous Drain Current Id1.3A
Drain Source Voltage Vds20V
On Resistance Rds(on)0.11ohm
Rds(on) Test Voltage Vgs4.5V
Threshold Voltage Vgs700mV
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Current Id Max1.3A
Operating Temperature Range-55°C to +150°C
Voltage Vgs Max8V
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