• NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
  • NDS355AN
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SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

polarityN-Channel
voltage_rating_dc30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current1.70 A
breakdown_voltage_drain_to_source30.0 V
vds_drain_to_source_voltage30.0 V
current_rating1.70 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT), Tape & Reel (TR)
rds_drain_to_source_resistance_on125 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation500 mW
Transistor PolarityN Channel
Continuous Drain Current Id1.7A
Drain Source Voltage Vds30V
On Resistance Rds(on)0.065ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.6V
Power Dissipation Pd500mW
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-55°C
PackagingCut Tape
Current Id Max1.7A
Current Temperature25°C
Device MarkingNDS355AN
External Depth2.5mm
External Length / Height1.12mm
External Width3.05mm
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Range-55°C to +150°C
Pulse Current Idm10A
SMD MarkingNDS355AN
Tape Width8mm
Voltage Vds Typ30V
Voltage Vgs Max1.6V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max2V
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