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These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
| polarity | N-Channel, P-Channel |
| breakdown_voltage_gate_to_source | -20.0 V to 20.0 V |
| id_continuous_drain_current | 6.30 A |
| breakdown_voltage_drain_to_source | 30.0 V |
| vds_drain_to_source_voltage | 30.0 V |
| current_rating | 4.80 A |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| packaging | Cut Tape (CT) |
| case_package | SO, SOIC |
| rds_drain_to_source_resistance_on | 35.0 mΩ |
| lifecycle_status | Obsolete |
| rohs_status | Compliant |
| pin_count | 8 |
| power_dissipation | 2.50 W |
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