• NDT3055L
  • NDT3055L
  • NDT3055L
  • NDT3055L
  • NDT3055L
  • NDT3055L
  • NDT3055L
  • NDT3055L
  • NDT3055L
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These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

polarityN-Channel
voltage_rating_dc60.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current4.00 A
breakdown_voltage_drain_to_source60.0 V
vds_drain_to_source_voltage60.0 V
current_rating3.50 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT), Tape & Reel (TR)
case_packageSOT-223
rds_drain_to_source_resistance_on100 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count4
power_dissipation3.00 W
Transistor PolarityN Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds60V
On Resistance Rds(on)0.07ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.6V
Power Dissipation Pd3W
Transistor Case StyleSOT-223
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Operating Temperature Min-65°C
PackagingCut Tape
Current Id Max4A
Current Temperature25°C
External Depth7.3mm
External Length / Height1.7mm
External Width6.7mm
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Range-65°C to +150°C
Pulse Current Idm25A
SMD Marking3055L
Tape Width12mm
Voltage Vds Typ60V
Voltage Vgs Max1.6V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max2V
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