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Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

polarity	P-Channel
voltage_rating_dc	-30.0 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	5.00 A
breakdown_voltage_drain_to_source	-30.0 V
vds_drain_to_source_voltage	-30.0 V
current_rating	-5.00 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SOT-223
rds_drain_to_source_resistance_on	65.0 mΩ
lifecycle_status	Active
rohs_status	Compliant
pin_count	4
power_dissipation	3.00 W
Transistor Polarity	P Channel
Continuous Drain Current Id	5A
Drain Source Voltage Vds	-30V
On Resistance Rds(on)	65mohm
Rds(on) Test Voltage Vgs	-10V
Threshold Voltage Vgs	1.6V
Power Dissipation Pd	3W
Transistor Case Style	SOT-223
No. of Pins	4Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	5A
Current Temperature	25°C
External Depth	7.3mm
External Length / Height	1.7mm
External Width	6.7mm
Full Power Rating Temperature	25°C
No. of Transistors	1
Operating Temperature Min	-65°C
Operating Temperature Range	-65°C to +150°C
Packaging	Cut Tape
Pulse Current Idm	15A
SMD Marking	452A
Tape Width	12mm
Voltage Vds Typ	30V
Voltage Vgs Max	-1.6V
Voltage Vgs Rds on Measurement	10V
Voltage Vgs th Max	-2.8V