• NDT452AP
  • NDT452AP
  • NDT452AP
  • NDT452AP
  • NDT452AP
  • NDT452AP
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Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

polarityP-Channel
voltage_rating_dc-30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current5.00 A
breakdown_voltage_drain_to_source-30.0 V
vds_drain_to_source_voltage-30.0 V
current_rating-5.00 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-223
rds_drain_to_source_resistance_on65.0 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count4
power_dissipation3.00 W
Transistor PolarityP Channel
Continuous Drain Current Id5A
Drain Source Voltage Vds-30V
On Resistance Rds(on)65mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs1.6V
Power Dissipation Pd3W
Transistor Case StyleSOT-223
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max5A
Current Temperature25°C
External Depth7.3mm
External Length / Height1.7mm
External Width6.7mm
Full Power Rating Temperature25°C
No. of Transistors1
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +150°C
PackagingCut Tape
Pulse Current Idm15A
SMD Marking452A
Tape Width12mm
Voltage Vds Typ30V
Voltage Vgs Max-1.6V
Voltage Vgs Rds on Measurement10V
Voltage Vgs th Max-2.8V
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