• NTE451
  • NTE451
  • NTE451
  • NTE451
Срок поставки и цена – по запросу

JFET, -25V, 20mA, TO-92-3; Transistor Type:JFET; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss:4mA to 20mA; Gate-Source Cutoff Voltage Vgs(off) Max:-4V; Power Dissipation Pd:350mW; No. of Pins:3

Количество в упаковке1
Transistor TypeJFET
Breakdown Voltage Vbr-25V
Zero Gate Voltage Drain Current Idss Min4mA
Zero Gate Voltage Drain Current Idss Max20mA
Gate-Source Cutoff Voltage Vgs(off) Max-4V
No. of Pins3
breakdown_voltage_gate_to_source-25.0 V (min)
power_dissipation350 mW
vds_drain_to_source_voltage25.0 V
rohs_statusCompliant
mounting_styleThrough Hole
pin_count3
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