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DUAL GATE RF MOSFET, N CH 20V, TO72; Tra; DUAL GATE RF MOSFET, N CH 20V, TO72; Transistor Type:RF MOSFET; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60mA; Power Dissipation Pd:360mW; Noise Figure Typ:1.8dB; Operating Temperature Min:-65°C; No. of Pins:4
| Drain Source Voltage Vds | 20V |
| Continuous Drain Current Id | 60mA |
| Power Dissipation Pd | 360mW |
| Operating Frequency Min | - |
| Operating Frequency Max | - |
| RF Transistor Case | - |
| No. of Pins | 4Pins |
| polarity | Dual N-Channel |
| id_continuous_drain_current | 60.0 mA |
| power_dissipation | 360 mW |
| vds_drain_to_source_voltage | 20.0 V |
| breakdown_voltage_drain_to_source | 20.0 V |
| mounting_style | Through Hole |
| rohs_status | Compliant |
| pin_count | 4 |
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