• NTHC5513T1G
  • NTHC5513T1G
  • NTHC5513T1G
  • NTHC5513T1G
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

MOSFET, NP CH, 20V, CHIPFET 1206A; Transistor Polarity:N and P Complement; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8; SVHC:No SVHC (18-Jun-2012)

Transistor PolarityN and P Channel
Continuous Drain Current Id2.9A
Drain Source Voltage Vds20V
On Resistance Rds(on)0.058ohm
Rds(on) Test Voltage Vgs4.5V
Threshold Voltage Vgs600mV
Power Dissipation Pd1.1W
Transistor Case Style1206
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (12-Jan-2017)
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
polarityN-Channel, P-Channel
voltage_rating_dc20.0 V
breakdown_voltage_gate_to_source-12.0 V to 12.0 V
id_continuous_drain_current3.90 A
lead_free_statusLead Free
vds_drain_to_source_voltage20.0 V
current_rating3.10 A
rise_time13.0 ns
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingReel
rds_drain_to_source_resistance_on80.0 mΩ, 200 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count8
power_dissipation1.10 W
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