• NTHS4101PT1G
  • NTHS4101PT1G
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Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:6.7A; On Resistance, Rds(on):34mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-ChipFET ;RoHS Compliant: Yes

Количество в упаковке1
КорпусChipFET
Вес0.037 г
Transistor PolarityP Channel
Continuous Drain Current Id-4.8A
Drain Source Voltage Vds-20V
On Resistance Rds(on)21mohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-1.5V
Power Dissipation Pd1.3W
Transistor Case StyleChipFET
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Jul-2017)
polarityP-Channel
voltage_rating_dc-20.0 V
breakdown_voltage_gate_to_source-8.00 V to 8.00 V
id_continuous_drain_current6.70 A, -4.80 A
rohs_statusCompliant
vds_drain_to_source_voltage-20.0 V
current_rating-4.80 A
lead_free_statusLead Free
mounting_styleSurface Mount
packagingReel
rds_drain_to_source_resistance_on42.0 mΩ
lifecycle_statusActive
power_dissipation1.30 W
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