• NTJD4152PT1G
  • NTJD4152PT1G
Срок поставки и цена – по запросу

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:0.88A; On Resistance, Rds(on):215mohm; Package/Case:SC-88; Power Dissipation, Pd:0.272W; Drain-Source Breakdown Voltage:20V ;RoHS Compliant: Yes

polarityDual P-Channel
voltage_rating_dc-20.0 V
breakdown_voltage_gate_to_source-12.0 V to 12.0 V
id_continuous_drain_current880 mA
power_dissipation272 mW
vds_drain_to_source_voltage-20.0 V
current_rating-880 mA
lead_free_statusLead Free
mounting_styleSurface Mount
packagingTape & Reel (TR)
case_packageSOT-363
rds_drain_to_source_resistance_on600 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count6
Transistor PolarityDual P Channel
Continuous Drain Current Id880mA
Drain Source Voltage Vds-20V
On Resistance Rds(on)0.215ohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-1.2V
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