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TRANSISTOR, IGBT MODULE; Transistor Polarity:N Channel; DC Collector Current:20A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:56W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-20°C to +150°C; Transistor Case Style:Module; No. of Pins:23; Current Ic Continuous a Max:20A; Module Configuration:Six; Package / Case:Module; Power Dissipation Max:56W; Power Dissipation Pd:56W; Termination Type:Screw; Voltage Vces:600V
| Вес | 0.72 кг |
| Количество в упаковке | 1 |
| Transistor Polarity | N Channel |
| DC Collector Current | 20A |
| Collector Emitter Saturation Voltage Vce(on) | 1.8V |
| Power Dissipation Pd | 56W |
| Collector Emitter Voltage V(br)ceo | 600V |
| Transistor Case Style | Module |
| No. of Pins | 23 |
| Operating Temperature Max | 150°C |
| Current Ic Continuous a Max | 20A |
| Module Configuration | Six |
| Operating Temperature Min | -20°C |
| Operating Temperature Range | -20°C to +150°C |
| Power Dissipation Max | 56W |
| Termination Type | Screw |
| Voltage Vces | 600V |
| polarity | N-Channel |
| rohs_status | Non-Compliant |
| breakdown_voltage_collector_to_emitter | 600 V |
| power_dissipation | 56.0 W |
| pin_count | 23 |
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