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PHOTOTRANSISTOR; Transistor Type:Phototransistor; Half Angle:35°; Case Style:Radial; Current, Ic Typ:400mA; Time, Rise:3µs; Operating Temperature Range:-25°C to +85°C; External Depth:1.5mm; External Length / Height:3.5mm; Termination Type:Radial Leaded; Width, External:3mm; Current Ic Max:20A; Dark Current:100nA; Lead Length:17.5mm; Lead Spacing:2.54mm; Power Dissipation:75mW; Temperature, Storage Max:+85°C; Temperature, Storage Min:-40°C; Time, Fall:3.5µs; Viewing Angle:70°; Voltage, Vce Sat Max:0.4V; Wavelength, Peak:800nm
| Wavelength Typ | 800nm |
| Viewing Angle | 35° |
| Power Consumption | 75mW |
| No. of Pins | 2Pins |
| Transistor Case Style | Side Looking |
| Packaging | Each |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| Angle of Half Sensitivity ± | 35° |
| Collector Emitter Saturation Voltage Vce(on) | 0.4V |
| Continuous Collector Current Ic Max | 20A |
| Current Ic Typ | 400mA |
| Dark Current | 100nA |
| External Depth | 1.5mm |
| External Length / Height | 3.5mm |
| External Width | 3mm |
| Fall Time tf | 3.5µs |
| Lead Length | 17.5mm |
| Lead Spacing | 2.54mm |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -25°C |
| Operating Temperature Range | -25°C to +85°C |
| Peak Wavelength | 800nm |
| Rise Time | 3µs |
| Storage Temperature Max | +85°C |
| Storage Temperature Min | -40°C |
| Transistor Polarity | NPN |
| Transistor Type | Photo |
| polarity | NPN |
| peak_wavelength | 800 nm |
| power_dissipation | 75.0 mW |
| viewing_angle | 35 ° |
| lead_length | 17.5 mm |
| lead_free_status | Lead Free |
| mounting_style | Through Hole |
| packaging | Tube |
| rise_time | 3.00 µs |
| wavelength | 800 nm |
| rohs_status | Compliant |
| output_current | 20.0 mA (max) |
| pin_count | 2 |
| power_consumption | 75.0 mW |
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