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PHOTOTRANSISTOR; Transistor Type:Phototransistor; Half Angle:13°; Case Style:Radial; Sensitivity Nom @ mW/cm²:0.8mA@1mW/cm²; Current, Ic Typ:0.8mA; Time, Rise:3µs; Operating Temperature Range:-25°C to +85°C; External Depth:2.8mm; External Length / Height:4.0mm; Temp, Op. Max:+85°C; Temp, Op. Min:-25°C; Termination Type:Radial Leaded; Width, External:3mm; Current Ic Max:3mA; Dark Current:100nA; Lead Diameter:0.4mm; Lead Length:17.5mm; Lead Spacing:2.54mm; Power Dissipation:75mW; Temperature, Storage Max:+85°C; Temperature, Storage Min:-40°C; Time, Fall:3.5µs; Viewing Angle:26°; Voltage, Reverse Protection:6V; Voltage, Vce Sat Max:0.4V; Wavelength, Peak:860nm
Wavelength Typ | 860nm |
Viewing Angle | - |
Power Consumption | 75mW |
No. of Pins | 2Pins |
Transistor Case Style | Side Looking |
Packaging | Each |
Product Range | - |
Automotive Qualification Standard | - |
MSL | - |
Angle of Half Sensitivity ± | 13° |
Collector Emitter Saturation Voltage Vce(on) | 0.4V |
Continuous Collector Current Ic Max | 3mA |
Current Ic Typ | 0.8mA |
Dark Current | 100nA |
External Depth | 2.8mm |
External Length / Height | 4mm |
External Width | 3mm |
Fall Time tf | 3.5µs |
Lead Diameter | 0.4mm |
Lead Length | 17.5mm |
Lead Spacing | 2.54mm |
Nom Sensitivity @ mW/cmІ | 800µA @ 1mW/cmІ |
Operating Temperature Max | 85°C |
Operating Temperature Min | -25°C |
Operating Temperature Range | -25°C to +85°C |
Peak Wavelength | 860nm |
Reverse Protection Voltage | 6V |
Rise Time | 3µs |
Storage Temperature Max | +85°C |
Storage Temperature Min | -40°C |
Transistor Polarity | NPN |
Transistor Type | Photo |
polarity | NPN |
peak_wavelength | 860 nm |
power_dissipation | 75.0 mW |
viewing_angle | 26 ° |
lead_length | 17.5 mm |
lead_free_status | Lead Free |
mounting_style | Through Hole |
packaging | Tube |
rise_time | 3.00 µs |
wavelength | 860 nm |
rohs_status | Compliant |
output_current | 20.0 mA (max) |
pin_count | 2 |
power_consumption | 75.0 mW |