• PT480FE0000F
  • PT480FE0000F
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

PHOTOTRANSISTOR; Transistor Type:Phototransistor; Half Angle:13°; Case Style:Radial; Sensitivity Nom @ mW/cm²:0.8mA@1mW/cm²; Current, Ic Typ:0.8mA; Time, Rise:3µs; Operating Temperature Range:-25°C to +85°C; External Depth:2.8mm; External Length / Height:4.0mm; Temp, Op. Max:+85°C; Temp, Op. Min:-25°C; Termination Type:Radial Leaded; Width, External:3mm; Current Ic Max:3mA; Dark Current:100nA; Lead Diameter:0.4mm; Lead Length:17.5mm; Lead Spacing:2.54mm; Power Dissipation:75mW; Temperature, Storage Max:+85°C; Temperature, Storage Min:-40°C; Time, Fall:3.5µs; Viewing Angle:26°; Voltage, Reverse Protection:6V; Voltage, Vce Sat Max:0.4V; Wavelength, Peak:860nm

Wavelength Typ860nm
Viewing Angle-
Power Consumption75mW
No. of Pins2Pins
Transistor Case StyleSide Looking
PackagingEach
Product Range-
Automotive Qualification Standard-
MSL-
Angle of Half Sensitivity ±13°
Collector Emitter Saturation Voltage Vce(on)0.4V
Continuous Collector Current Ic Max3mA
Current Ic Typ0.8mA
Dark Current100nA
External Depth2.8mm
External Length / Height4mm
External Width3mm
Fall Time tf3.5µs
Lead Diameter0.4mm
Lead Length17.5mm
Lead Spacing2.54mm
Nom Sensitivity @ mW/cmІ800µA @ 1mW/cmІ
Operating Temperature Max85°C
Operating Temperature Min-25°C
Operating Temperature Range-25°C to +85°C
Peak Wavelength860nm
Reverse Protection Voltage6V
Rise Time3µs
Storage Temperature Max+85°C
Storage Temperature Min-40°C
Transistor PolarityNPN
Transistor TypePhoto
polarityNPN
peak_wavelength860 nm
power_dissipation75.0 mW
viewing_angle26 °
lead_length17.5 mm
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
rise_time3.00 µs
wavelength860 nm
rohs_statusCompliant
output_current20.0 mA (max)
pin_count2
power_consumption75.0 mW
Показать остальные свойства..