Срок доставки – по запросу | Цена – по запросу |
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
rohs_status | Compliant |
supply_voltage_dc | 1.70 V |
wavelength | 940 nm |
rise_time | 10.0 µs |
reach_svhc_compliance | No SVHC |
lead_free_status | Lead Free |
mounting_style | Through Hole |
packaging | Bulk |
forward_voltage | 1.70 V |
input_current | 20.0 mA |
lifecycle_status | Active |
output_voltage | 30.0 V |
operating_voltage | 1.70 V |
pin_count | 4 |
Количество в упаковке | 100 |
Вес | 0.002 г |
Sensor Output | Phototransistor |
Sensor Mounting | Through Hole |
Sensing Distance | 1.27mm |
Forward Current If | 50mA |
Reverse Voltage Vr | 5V |
Collector Emitter Voltage V(br)ceo | 30V |
Forward Voltage | 1.7V |
Product Range | QRD1114 |
SVHC | No SVHC (15-Jun-2015) |
Forward Current If Max | 50mA |
Forward Voltage VF Max | 1.7V |
Input Current | 20mA |
No. of Channels | 1Channels |
No. of Pins | 4Pins |
Operating Temperature Max | 85°C |
Operating Temperature Min | -40°C |
Operating Temperature Range | -40°C to +85°C |
Optocoupler Output Type | Phototransistor |
Output Voltage | 30V |
Packaging | Each |