• QRD1114
  • QRD1114
  • QRD1114
  • QRD1114
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.

rohs_statusCompliant
supply_voltage_dc1.70 V
wavelength940 nm
rise_time10.0 µs
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingBulk
forward_voltage1.70 V
input_current20.0 mA
lifecycle_statusActive
output_voltage30.0 V
operating_voltage1.70 V
pin_count4
Количество в упаковке100
Вес0.002 г
Sensor OutputPhototransistor
Sensor MountingThrough Hole
Sensing Distance1.27mm
Forward Current If50mA
Reverse Voltage Vr5V
Collector Emitter Voltage V(br)ceo30V
Forward Voltage1.7V
Product RangeQRD1114
SVHCNo SVHC (15-Jun-2015)
Forward Current If Max50mA
Forward Voltage VF Max1.7V
Input Current20mA
No. of Channels1Channels
No. of Pins4Pins
Operating Temperature Max85°C
Operating Temperature Min-40°C
Operating Temperature Range-40°C to +85°C
Optocoupler Output TypePhototransistor
Output Voltage30V
PackagingEach
Показать остальные свойства..

Аналоги