• QS5K2TR
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MOSFET, DUAL, NN, 30V, 2A; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.25W; Transistor Case Style:TSMT; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:175pF; Continuous Drain Current Id:2A; Current Id Max:2A; Drain Source Voltage Vds:30V; Fall Time tf:8ns; Module Configuration:Dual; On Resistance Rds(on):154mohm; Package / Case:TSMT5; Power Dissipation Pd:1.25W; Power Dissipation Pd:1.25W; Pulse Current Idm:8A; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:2.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:500mV

Transistor PolarityDual N Channel
Continuous Drain Current Id2A
Drain Source Voltage Vds30V
On Resistance Rds(on)154mohm
Rds(on) Test Voltage Vgs4.5V
Threshold Voltage Vgs1.5V
Power Dissipation Pd1.25W
Transistor Case StyleTSMT
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Capacitance Ciss Typ175pF
Continuous Drain Current Id, N Channel2A
Current Id Max2A
Drain Source Voltage Vds, N Channel30V
Fall Time tf8ns
Module ConfigurationDual
On Resistance Rds(on), N Channel0.071ohm
PackagingCut Tape
Pulse Current Idm8A
Rise Time10ns
Termination TypeSurface Mount Device
Voltage Vds Typ30V
Voltage Vgs Rds on Measurement2.5V
Voltage Vgs th Max1.5V
Voltage Vgs th Min500mV
polarityDual N-Channel
input_capacitance175 pF
voltage_rating_dc30.0 V
id_continuous_drain_current2.00 A
gate_charge3.90 nC
breakdown_voltage_drain_to_source30.0 V
vds_drain_to_source_voltage30.0 V
current_rating2.00 A
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rise_time10.0 ns
rds_drain_to_source_resistance_on110 mΩ
rohs_statusCompliant
pin_count5
power_dissipation1.25 W
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