• QSE113
  • QSE113
  • QSE113
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INFRARED PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:880nm; Power Consumption:100mW; Viewing Angle:25°; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ic Typ:1.5mA; External Depth:2.54mm; External Length / Height:5.08mm; External Width:4.44mm; Fall Time tf:8µs; Half Angle:25°; Lead Length:12.7mm; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +100°C; Package / Case:Side Emitting; Peak Spectral Response Wavelength:880nm; Peak Wavelength:880nm; Rise Time:8µs; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Termination Type:Radial Leaded; Transistor Type:Photo; Voltage Vcc:5V

polarityNPN, N-Channel
output_power100 mW
reach_svhc_complianceNo SVHC
viewing_angle25 °
lead_length12.7 mm
voltage_rating_dc30.0 V
lead_free_statusLead Free
mounting_styleThrough Hole
packagingBulk
peak_wavelength880 nm
rise_time8.00 µs
number_of_channels1
operating_voltage5.00 V
wavelength880 nm
lifecycle_statusActive
output_voltage30.0 V (max)
rohs_statusCompliant
pin_count2
supply_voltage_dc5.00 V
power_consumption100 mW
breakdown_voltage30.0 V
Wavelength Typ880nm
Viewing Angle25°
Power Consumption100mW
No. of Pins2Pins
Transistor Case StyleSide Looking
PackagingEach
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Angle of Half Sensitivity ±25°
Current Ic Typ1.5mA
External Depth2.54mm
External Length / Height5.08mm
External Width4.44mm
Fall Time tf8µs
Lead Length12.7mm
Operating Temperature Max100°C
Operating Temperature Min-40°C
Operating Temperature Range-40°C to +100°C
Peak Spectral Response Wavelength880nm
Peak Wavelength880nm
Rise Time8µs
Storage Temperature Max100°C
Storage Temperature Min-40°C
Transistor PolarityNPN
Transistor TypePhoto
Voltage Vcc5V
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