• RFP12N10L
  • RFP12N10L
  • RFP12N10L
  • RFP12N10L
  • RFP12N10L
  • RFP12N10L
  • RFP12N10L
  • RFP12N10L
  • RFP12N10L
Срок поставки и цена – по запросу

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.

polarityN-Channel
voltage_rating_dc100 V
breakdown_voltage_gate_to_source-10.0 V to 10.0 V
id_continuous_drain_current12.0 A
breakdown_voltage_drain_to_source100 V
vds_drain_to_source_voltage100 V
current_rating12.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingRail
rds_drain_to_source_resistance_on200 mΩ
rohs_statusCompliant
pin_count3
power_dissipation60.0 W
Transistor PolarityN Channel
Continuous Drain Current Id12A
Drain Source Voltage Vds100V
On Resistance Rds(on)200mohm
Rds(on) Test Voltage Vgs5V
Threshold Voltage Vgs2V
Power Dissipation Pd60W
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Full Power Rating Temperature25°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm30A
SMD MarkingRFP12N10L
Termination TypeThrough Hole
Voltage Vgs Max2V
Voltage Vgs Rds on Measurement5V
Voltage Vgs th Max2V
Показать остальные свойства..

Аналоги