• SCT30N120
  • SCT30N120
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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

polarityN-Channel
rohs_statusCompliant
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube, Rail
lifecycle_statusActive
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.08ohm
Rds(on) Test Voltage Vgs20V
Threshold Voltage Vgs2.6V
Power Dissipation Pd270W
Transistor Case StyleHiP247
No. of Pins3Pins
Operating Temperature Max200°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
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