• SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
  • SI2301BDS-T1-E3
Срок доставки – по запросу
Цена – по запросу
итого  цена по запросу

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ohm; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

polarityP-Channel
id_continuous_drain_current-2.20 A
power_dissipation900 mW
vds_drain_to_source_voltage-20.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23
rds_drain_to_source_resistance_on100 mΩ
rohs_statusCompliant
pin_count3
Количество в упаковке3000
КорпусSOT23
Вес0.038 г
Transistor PolarityP Channel
Continuous Drain Current Id-2.4A
Drain Source Voltage Vds-20V
On Resistance Rds(on)100mohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-950mV
Power Dissipation Pd900mW
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-2.2A
Device MarkingSI2301BDS
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Pulse Current Idm10A
Termination TypeSurface Mount Device
Voltage Vds Typ-20V
Voltage Vgs Max-950mV
Voltage Vgs Rds on Measurement-4.5V
Показать остальные свойства..