• SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
  • SI2301CDS-T1-GE3
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SI2301CDS-T1-GE3 P-channel MOSFET Transistor, 2.3 A, 20 V, 3-Pin SOT-23

polarityP-Channel
id_continuous_drain_current-3.10 A
power_dissipation1.60 W
vds_drain_to_source_voltage-20.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rohs_statusCompliant
pin_count3
Количество в упаковке3000
КорпусSOT23
Вес0.043 г
Transistor PolarityP Channel
Continuous Drain Current Id-3.1A
Drain Source Voltage Vds-20V
On Resistance Rds(on)90mohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-400mV
Power Dissipation Pd1.6W
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
Current Id Max-3.1A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Voltage Vgs Max8V
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