• SI2308BDS-T1-GE3
  • SI2308BDS-T1-GE3
  • SI2308BDS-T1-GE3
  • SI2308BDS-T1-GE3
  • SI2308BDS-T1-GE3
  • SI2308BDS-T1-GE3
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Цена – по запросу
итого  цена по запросу

MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W

Количество в упаковке3000
КорпусTO-236
Вес0.044 г
polarityN-Channel
id_continuous_drain_current2.30 A
power_dissipation1.09 W
vds_drain_to_source_voltage60.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rohs_statusCompliant
pin_count3
Transistor PolarityN Channel
Continuous Drain Current Id2.3A
Drain Source Voltage Vds60V
On Resistance Rds(on)0.13ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs3V
Power Dissipation Pd1.09W
Transistor Case StyleTO-236
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max1.9A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Voltage Vgs Max20V
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