• SI2323DS-T1-E3
  • SI2323DS-T1-E3
  • SI2323DS-T1-E3
  • SI2323DS-T1-E3
  • SI2323DS-T1-E3
  • SI2323DS-T1-E3
Срок поставки и цена – по запросу

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.031Ohm; ID -3.7A; TO-236 (SOT-23); PD 0.75W

polarityP-Channel
id_continuous_drain_current-4.70 A
breakdown_voltage_drain_to_source-20.0 V
vds_drain_to_source_voltage-20.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOT-23-3
rds_drain_to_source_resistance_on39.0 mΩ
rohs_statusCompliant
pin_count3
power_dissipation1.25 W
Количество в упаковке3000
КорпусTO-236
Вес0.038 г
Transistor PolarityP Channel
Continuous Drain Current Id-4.7A
Drain Source Voltage Vds-20V
On Resistance Rds(on)39mohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-1V
Power Dissipation Pd1.25W
Transistor Case StyleTO-236
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-4.7A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ-20V
Voltage Vgs Max-1V
Voltage Vgs Rds on Measurement-4.5V
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