• SI3443BDV-T1-E3
  • SI3443BDV-T1-E3
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MOSFET, P, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Base Number:3443; Current Id Max:-3.6A; Output Current Max:1.1A; Package / Case:TSOP; Power Dissipation Pd:1.1W; Power Dissipation Pd:-20mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-12V; Voltage Vgs Rds on Measurement:-4.5V

polarityP-Channel
id_continuous_drain_current3.60 A
power_dissipation-20.0 mW
lead_free_statusLead Free
mounting_styleSurface Mount
packagingReel
rohs_statusCompliant
pin_count6
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