• SI4435DDY-T1-GE3
  • SI4435DDY-T1-GE3
  • SI4435DDY-T1-GE3
  • SI4435DDY-T1-GE3
  • SI4435DDY-T1-GE3
  • SI4435DDY-T1-GE3
  • SI4435DDY-T1-GE3
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SI4435DDY-T1-GE3, транзистор P-Ch MOSFET SO-8 30V 24mohmтранзисторы полевые импортныетранзисторы полевые импортныетранзисторы полевые импортные

polarityP-Channel
id_continuous_drain_current-8.10 A
power_dissipation2.50 W
vds_drain_to_source_voltage-30.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rohs_statusCompliant
pin_count8
Transistor PolarityP Channel
Continuous Drain Current Id-8.1A
Drain Source Voltage Vds-30V
On Resistance Rds(on)19.5mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-3V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-8.1A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Voltage Vgs Max-20V
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