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This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

polarity	P-Channel
input_capacitance	1.60 nF
voltage_rating_dc	-30.0 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	-8.80 A
gate_charge	17.0 nC
breakdown_voltage_drain_to_source	-150 V
vds_drain_to_source_voltage	-30.0 V
current_rating	-8.80 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SOIC
rds_drain_to_source_resistance_on	20.0 mΩ
rise_time	13.5 ns
lifecycle_status	Active
rohs_status	Compliant
pin_count	8
power_dissipation	2.50 W
Transistor Polarity	P Channel
Continuous Drain Current Id	-8.8A
Drain Source Voltage Vds	-30V
On Resistance Rds(on)	15mohm
Rds(on) Test Voltage Vgs	-10V
Threshold Voltage Vgs	-1.7V
Power Dissipation Pd	2.5W
Transistor Case Style	SOIC
No. of Pins	8Pins
Operating Temperature Max	175°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	-8.8A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +175°C
Packaging	Cut Tape
Termination Type	Surface Mount Device
Voltage Vds Typ	-30V
Voltage Vgs Max	-1.7V
Voltage Vgs Rds on Measurement	-10V