• SI4435DY
  • SI4435DY
  • SI4435DY
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This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

polarityP-Channel
input_capacitance1.60 nF
voltage_rating_dc-30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current-8.80 A
gate_charge17.0 nC
breakdown_voltage_drain_to_source-150 V
vds_drain_to_source_voltage-30.0 V
current_rating-8.80 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOIC
rds_drain_to_source_resistance_on20.0 mΩ
rise_time13.5 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count8
power_dissipation2.50 W
Transistor PolarityP Channel
Continuous Drain Current Id-8.8A
Drain Source Voltage Vds-30V
On Resistance Rds(on)15mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-1.7V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-8.8A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ-30V
Voltage Vgs Max-1.7V
Voltage Vgs Rds on Measurement-10V
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