• SI4477DY-T1-GE3
  • SI4477DY-T1-GE3
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Single P-Channel 20 V 0.0062 O 190 nC Surface Mount Mosfet - SOIC-8

polarityP-Channel
id_continuous_drain_current-26.6 A
power_dissipation3.00 W
vds_drain_to_source_voltage-20.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rohs_statusCompliant
pin_count8
Transistor PolarityP Channel
Continuous Drain Current Id-26.6A
Drain Source Voltage Vds-20V
On Resistance Rds(on)0.0051ohm
Rds(on) Test Voltage Vgs-4.5V
Threshold Voltage Vgs-1.5V
Power Dissipation Pd3W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max-18A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Voltage Vgs Max-12V
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