| Срок поставки и цена – по запросу | |
MOSFET, DUAL, PP, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.4A; Fall Time tf:35ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance @ Vgs = 4.5V:150mohm; On State resistance @ Vgs = 10V:120mohm; P Channel Gate Charge:14.5nC; Package / Case:SOIC; Power Dissipation Pd:1.4W; Pulse Current Idm:25A; Rise Time:15ns; Termination Type:SMD; Turn Off Time:50ns; Turn On Time:10ns; Voltage Vds Typ:-60V; Voltage Vgs Rds on Measurement:4.5V
| polarity | Dual P-Channel |
| rise_time | 15.0 ns |
| power_dissipation | 1.40 W |
| pin_count | 8 |
