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MOSFET, N CH, 1.1A, 20V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:US6; No. of Pins:6; Current Id Max:1.1A; Package / Case:US6; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4V
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 1.1A |
| Drain Source Voltage Vds | 20V |
| On Resistance Rds(on) | 160mohm |
| Rds(on) Test Voltage Vgs | 4V |
| Threshold Voltage Vgs | 1.1V |
| Power Dissipation Pd | 300mW |
| Transistor Case Style | US6 |
| No. of Pins | 6Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (15-Jun-2015) |
| Current Id Max | 1.1A |
| Termination Type | Surface Mount Device |
| Voltage Vds Typ | 20V |
| Voltage Vgs Max | 12V |
| Voltage Vgs Rds on Measurement | 4V |
| polarity | N-Channel |
| id_continuous_drain_current | 1.10 A |
| pin_count | 6 |
| rohs_status | Compliant |
| mounting_style | Surface Mount |
| power_dissipation | 300 mW |
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