SSN1N45BTA Купить в Москве

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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.

polarity	N-Channel
voltage_rating_dc	450 V
breakdown_voltage_gate_to_source	-50.0 V to 50.0 V
id_continuous_drain_current	500 mA
breakdown_voltage_drain_to_source	450 V
vds_drain_to_source_voltage	450 V
current_rating	500 mA
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Through Hole
packaging	Tape
case_package	TO-92
rds_drain_to_source_resistance_on	4.25 Ω
rohs_status	Compliant
pin_count	3
power_dissipation	900 mW
Transistor Polarity	N Channel
Continuous Drain Current Id	500mA
Drain Source Voltage Vds	450V
On Resistance Rds(on)	3.4ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	3V
Power Dissipation Pd	900mW
Transistor Case Style	TO-226AA
No. of Pins	3Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	-
SVHC	No SVHC (15-Jun-2015)