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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.
| polarity | N-Channel |
| voltage_rating_dc | 450 V |
| breakdown_voltage_gate_to_source | -50.0 V to 50.0 V |
| id_continuous_drain_current | 500 mA |
| breakdown_voltage_drain_to_source | 450 V |
| vds_drain_to_source_voltage | 450 V |
| current_rating | 500 mA |
| lead_free_status | Lead Free |
| reach_svhc_compliance | No SVHC |
| mounting_style | Through Hole |
| packaging | Tape |
| case_package | TO-92 |
| rds_drain_to_source_resistance_on | 4.25 Ω |
| rohs_status | Compliant |
| pin_count | 3 |
| power_dissipation | 900 mW |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 500mA |
| Drain Source Voltage Vds | 450V |
| On Resistance Rds(on) | 3.4ohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs | 3V |
| Power Dissipation Pd | 900mW |
| Transistor Case Style | TO-226AA |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (15-Jun-2015) |
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