• SSN1N45BTA
  • SSN1N45BTA
  • SSN1N45BTA
  • SSN1N45BTA
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.

polarityN-Channel
voltage_rating_dc450 V
breakdown_voltage_gate_to_source-50.0 V to 50.0 V
id_continuous_drain_current500 mA
breakdown_voltage_drain_to_source450 V
vds_drain_to_source_voltage450 V
current_rating500 mA
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTape
case_packageTO-92
rds_drain_to_source_resistance_on4.25 Ω
rohs_statusCompliant
pin_count3
power_dissipation900 mW
Transistor PolarityN Channel
Continuous Drain Current Id500mA
Drain Source Voltage Vds450V
On Resistance Rds(on)3.4ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs3V
Power Dissipation Pd900mW
Transistor Case StyleTO-226AA
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
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