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MOSFET, N CH, 800V, 11A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:44A; Package / Case:D2-PAK; Power Dissipation Pd:150W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
polarity | N-Channel |
voltage_rating_dc | 800 V |
breakdown_voltage_gate_to_source | -30.0 V to 30.0 V |
id_continuous_drain_current | 44.0 A |
breakdown_voltage_drain_to_source | 800 V |
vds_drain_to_source_voltage | 800 V |
current_rating | 11.0 A |
lead_free_status | Lead Free |
reach_svhc_compliance | No SVHC |
mounting_style | Surface Mount |
packaging | Cut Tape (CT) |
rise_time | 17.0 ns |
rds_drain_to_source_resistance_on | 400 mΩ |
lifecycle_status | Active |
rohs_status | Compliant |
pin_count | 3 |
power_dissipation | 150 W |
Количество в упаковке | 1000 |
Корпус | D2PAK |
Вес | 2.03 г |
Transistor Polarity | N Channel |
Continuous Drain Current Id | 5.5A |
Drain Source Voltage Vds | 800V |
On Resistance Rds(on) | 0.35ohm |
Rds(on) Test Voltage Vgs | 4V |
Threshold Voltage Vgs | 4V |
Power Dissipation Pd | 150W |
Transistor Case Style | TO-263 |
No. of Pins | 3Pins |
Operating Temperature Max | 150°C |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
SVHC | No SVHC (17-Dec-2015) |
Current Id Max | 44A |
Operating Temperature Min | -65°C |
Operating Temperature Range | -65°C to +150°C |
Packaging | Cut Tape |
Termination Type | Surface Mount Device |
Transistor Type | Power MOSFET |
Voltage Vds Typ | 800V |
Voltage Vgs Max | 4V |
Voltage Vgs Rds on Measurement | 10V |
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