• STD1NK60-1
  • STD1NK60-1
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MOSFET, N CH, 600V, 1A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1A; Package / Case:IPAK; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current500 mA
breakdown_voltage_drain_to_source600 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleThrough Hole
packagingTube
case_packageTO-251
rds_drain_to_source_resistance_on8.00 Ω
rohs_statusCompliant
pin_count3
power_dissipation30.0 W
Transistor PolarityN Channel
Continuous Drain Current Id500mA
Drain Source Voltage Vds600V
On Resistance Rds(on)8ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs3V
Power Dissipation Pd30W
Transistor Case StyleTO-251AA
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (17-Dec-2015)
Current Id Max1A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Termination TypeThrough Hole
Transistor TypePower MOSFET
Voltage Vds Typ600V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
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