• STD65N55F3
  • STD65N55F3
  • STD65N55F3
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MOSFET, N CH, 55V, 80A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:DPAK; Power Dissipation Pd:110W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

polarityN-Channel
id_continuous_drain_current56.0 A, 80.0 A
breakdown_voltage_drain_to_source55.0 V
reach_svhc_complianceNo SVHC
lead_free_statusLead Free
mounting_styleSurface Mount
packagingCut Tape (CT)
rds_drain_to_source_resistance_on8.50 mΩ
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation110 W
Transistor PolarityN Channel
Continuous Drain Current Id32A
Drain Source Voltage Vds55V
On Resistance Rds(on)6.5ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd110W
Transistor Case StyleTO-252
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2015)
Current Id Max80A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
PackagingCut Tape
Termination TypeSurface Mount Device
Transistor TypePower MOSFET
Voltage Vds Typ55V
Voltage Vgs Max20V
Voltage Vgs Rds on Measurement10V
Количество в упаковке2500
КорпусDPAK
Вес0.41 г
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