• STGE200NB60S
  • STGE200NB60S
  • STGE200NB60S
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IGBT, SOT-227; Transistor Type:IGBT; DC Collector Current:200A; Collector Emitter Voltage Vces:1.2V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:150A; Package / Case:ISOTOP; Power Dissipation Max:600W; Power Dissipation Pd:600W; Power Dissipation Pd:600W; Pulsed Current Icm:400A; Rise Time:112ns; Termination Type:Screw; Transistor Polarity:N Channel; Voltage Vces:600V

polarityN-Channel
breakdown_voltage_collector_to_emitter600 V
id_continuous_drain_current200 A
lead_free_statusLead Free
vds_drain_to_source_voltage600 V
voltage_rating_dc600 V
rise_time112 ns
reach_svhc_complianceNo SVHC
mounting_styleChassis
packagingTube
lifecycle_statusActive
rohs_statusCompliant
pin_count4
power_dissipation600 W
current_rating150 A
DC Collector Current200A
Collector Emitter Saturation Voltage Vce(on)1.2V
Power Dissipation Pd600W
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleISOTOP
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (17-Dec-2015)
Current Ic Continuous a Max150A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Power Dissipation Max600W
Pulsed Current Icm400A
Rise Time112ns
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces600V
Количество в упаковке10
КорпусISOTOP
Вес43.99 г
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