• STP11NM80
  • STP11NM80
  • STP11NM80
  • STP11NM80
  • STP11NM80
  • STP11NM80
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MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:800V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:11A; On State resistance @ Vgs = 10V:400mohm; Package / Case:TO-220; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:800V; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Количество в упаковке50
КорпусTO-220
Вес2.748 г
Transistor PolarityN Channel
Continuous Drain Current Id11A
Drain Source Voltage Vds800V
On Resistance Rds(on)400mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd150W
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (17-Dec-2015)
Alternate Case StyleSOT-78B
Current Id Max11A
On State resistance @ Vgs = 10V400mohm
Operating Temperature Min-65°C
Operating Temperature Range-65°C to +150°C
Pulse Current Idm44A
Voltage Vds800V
Voltage Vds Typ800V
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
polarityN-Channel
voltage_rating_dc800 V
breakdown_voltage_gate_to_source-30.0 V to 30.0 V
id_continuous_drain_current11.0 A
breakdown_voltage_drain_to_source800 V
vds_drain_to_source_voltage800 V
current_rating11.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageTO-220
rds_drain_to_source_resistance_on400 mΩ
rise_time17.0 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation150 W
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