• STP80PF55
  • STP80PF55
  • STP80PF55
  • STP80PF55
  • STP80PF55
  • STP80PF55
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MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:Through Hole; Voltage Vds Typ:-55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:-10V

Transistor PolarityP Channel
Continuous Drain Current Id-80A
Drain Source Voltage Vds-55V
On Resistance Rds(on)18mohm
Rds(on) Test Voltage Vgs-10V
Threshold Voltage Vgs-3V
Power Dissipation Pd300W
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (17-Dec-2015)
Current Id Max-80A
Current Temperature25°C
Full Power Rating Temperature25°C
Lead Spacing2.54mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +175°C
Pin Format1 g
Voltage Vds Typ-55V
Voltage Vgs Max3V
Voltage Vgs Rds on Measurement-10V
Количество в упаковке50
КорпусTO-220
Вес2.724 г
polarityP-Channel
voltage_rating_dc-55.0 V
breakdown_voltage_gate_to_source-16.0 V to 16.0 V
id_continuous_drain_current80.0 A
breakdown_voltage_drain_to_source55.0 V
vds_drain_to_source_voltage55.0 V
current_rating-80.0 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleThrough Hole
packagingTube
case_packageTO-220
rds_drain_to_source_resistance_on18.0 mΩ
rise_time190 ns
lifecycle_statusActive
rohs_statusCompliant
pin_count3
power_dissipation300 W
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