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DUAL IGBT MODULE 200A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage, Vces:1200V; Current Ic Continuous a Max:300A; Voltage, Vce Sat Max:2.6V; Power Dissipation:1500W; Case Style:M234; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:200A; Current Temperature:25°C; Current, Icm Pulsed:600A; External Depth:62mm; External Length / Height:30mm; Fall Time, Tf:450ns; Full Power Rating Temperature:25°C; Max Junction Temperature, Tj:150°C; No. of Transistors:2; Power Dissipation Pd:1500W; Rise Time:350ns; Voltage, Isolation:2500V; Width, External:108mm
| Transistor Polarity | N Channel |
| DC Collector Current | 200A |
| Collector Emitter Saturation Voltage Vce(on) | 2.6V |
| Power Dissipation Pd | 1.5kW |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | Module |
| No. of Pins | 7Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Current Ic @ Vce Sat | 200A |
| Current Ic Continuous a Max | 200A |
| Current Temperature | 25°C |
| External Depth | 62mm |
| External Length / Height | 30mm |
| External Width | 108mm |
| Fall Time tf | 450ns |
| Full Power Rating Temperature | 25°C |
| Height | 30mm |
| Isolation Voltage | 2.5kV |
| Junction Temperature Tj Max | 150°C |
| Module Configuration | Dual |
| No. of Transistors | 2 |
| Power Dissipation Max | 1.5kW |
| Pulsed Current Icm | 400A |
| Rise Time | 350ns |
| Termination Type | Screw |
| Voltage Vces | 1.2kV |
| polarity | N-Channel |
| size_height | 30.0 mm |
| power_dissipation | 1.50 kW |
| rise_time | 350 ns |
| mounting_style | Screw |
| isolation_voltage | 2.50 kV |
| rohs_status | Compliant |
| pin_count | 7 |
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