• BFD63
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MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:0.125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Case Style, Alternate:TO-204AA; Centres, Fixing:30mm; Current, Idm Pulse:24A; Pins, No. of:2; Pitch, Lead:11mm; Power Dissipation:198W; Power, Pd:198W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:1000V

polarityN-Channel
id_continuous_drain_current6.00 A
pin_count2
reach_svhc_complianceNo SVHC
rohs_statusCompliant
mounting_styleThrough Hole
power_dissipation198 W
Transistor PolarityN Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds1kV
On Resistance Rds(on)125mohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs4V
Power Dissipation Pd198W
Transistor Case StyleTO-3
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (07-Jul-2017)
Alternate Case StyleTO-204AA
Current Id Max6A
Current Temperature25°C
Fixing Centres30mm
Full Power Rating Temperature25°C
Lead Spacing11mm
No. of Transistors1
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulse Current Idm24A
Termination TypeThrough Hole
Voltage Vds Typ1kV
Voltage Vgs Max30V
Voltage Vgs Rds on Measurement10V
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