FDS6612A Купить в Москве

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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

polarity	N-Channel
input_capacitance	560 pF
voltage_rating_dc	30.0 V
breakdown_voltage_gate_to_source	-20.0 V to 20.0 V
id_continuous_drain_current	8.40 A
gate_charge	5.40 nC
breakdown_voltage_drain_to_source	30.0 V
vds_drain_to_source_voltage	30.0 V
current_rating	8.40 A
lead_free_status	Lead Free
reach_svhc_compliance	No SVHC
mounting_style	Surface Mount
packaging	Cut Tape (CT)
case_package	SOIC
rds_drain_to_source_resistance_on	22.0 mΩ
rise_time	5.00 ns
rohs_status	Compliant
pin_count	8
power_dissipation	2.50 W
Transistor Polarity	N Channel
Continuous Drain Current Id	8.4A
Drain Source Voltage Vds	30V
On Resistance Rds(on)	0.019ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	1.9V
Power Dissipation Pd	2.5W
Transistor Case Style	SOIC
No. of Pins	8Pins
Operating Temperature Max	150°C
Product Range	-
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited
SVHC	No SVHC (15-Jun-2015)
Current Id Max	8.4A
Operating Temperature Min	-55°C
Operating Temperature Range	-55°C to +150°C
Packaging	Cut Tape
Termination Type	Surface Mount Device
Voltage Vds Typ	30V
Voltage Vgs Max	1.9V
Voltage Vgs Rds on Measurement	10V