• FDS6612A
  • FDS6612A
Срок поставки и цена – по запросу

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

polarityN-Channel
input_capacitance560 pF
voltage_rating_dc30.0 V
breakdown_voltage_gate_to_source-20.0 V to 20.0 V
id_continuous_drain_current8.40 A
gate_charge5.40 nC
breakdown_voltage_drain_to_source30.0 V
vds_drain_to_source_voltage30.0 V
current_rating8.40 A
lead_free_statusLead Free
reach_svhc_complianceNo SVHC
mounting_styleSurface Mount
packagingCut Tape (CT)
case_packageSOIC
rds_drain_to_source_resistance_on22.0 mΩ
rise_time5.00 ns
rohs_statusCompliant
pin_count8
power_dissipation2.50 W
Transistor PolarityN Channel
Continuous Drain Current Id8.4A
Drain Source Voltage Vds30V
On Resistance Rds(on)0.019ohm
Rds(on) Test Voltage Vgs10V
Threshold Voltage Vgs1.9V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Current Id Max8.4A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
PackagingCut Tape
Termination TypeSurface Mount Device
Voltage Vds Typ30V
Voltage Vgs Max1.9V
Voltage Vgs Rds on Measurement10V
Показать остальные свойства..

Аналоги