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This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the r DS(on)@VGS = –1.5 V.
| polarity | P-Channel |
| rohs_status | Compliant |
| reach_svhc_compliance | No SVHC |
| lead_free_status | Lead Free |
| mounting_style | Surface Mount |
| lifecycle_status | Active |
| pin_count | 3 |
| Transistor Polarity | P Channel |
| Continuous Drain Current Id | -830mA |
| Drain Source Voltage Vds | -20V |
| On Resistance Rds(on) | 0.28ohm |
| Rds(on) Test Voltage Vgs | -4.5V |
| Threshold Voltage Vgs | -700mV |
| Power Dissipation Pd | 625mW |
| Transistor Case Style | SC-89 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (15-Jun-2015) |
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