• FGA25N120ANTD
  • FGA25N120ANTD
  • FGA25N120ANTD
  • FGA25N120ANTD
  • FGA25N120ANTD
Срок поставки и цена – по запросу

IGBT,NPT,TO-3PN; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic @ Vce Sat:25A; Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312W; Power Dissipation Pd:312W; Pulsed Current Icm:75A; Rise Time:50ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.5V
Power Dissipation Pd312W
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (15-Jun-2015)
Current Ic @ Vce Sat25A
Operating Temperature Min-55°C
Operating Temperature Range-55°C to +150°C
Pulsed Current Icm75A
Rise Time50ns
Termination TypeThrough Hole
Transistor PolarityN Channel
Transistor TypeIGBT
Voltage Vces1.2kV
polarityN-Channel
power_dissipation312 W
reach_svhc_complianceNo SVHC
rise_time50.0 ns
mounting_styleThrough Hole
rohs_statusCompliant
pin_count3
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